Date: 12/11/2009

Toshiba adds new devices to 30V MOSFET family for sync DC-DC converter apps

Toshiba has announced the expansion of its 30V MOSFETs with six devices features low on-resistance and fast switching for synchronous DC-DC converter applications in mobile and desktop computers, servers, game consoles and other electronic devices that require input voltage conversion for subsystems such as the processor, memory and other point-of-load devices.

The new devices are based on fifth and sixth generation UMOS V-H and UMOS VI-H process technologies to achieve low on-state resistance for the low side MOSFET and fast switching speed for high side MOSFET enabled through low gate charge (QSW).

The new lineup includes five N-channel MOSFETs and one MOSBD, a combination MOSFET and Schottky Barrier Diode in a single die that provides a low inductance structure and thus, improves power efficiency. The lineup provides a range of characteristics to meet various system requirements. Current ratings range from 13A to 26A, RDS (ON) (typ.) from 4.3 to 12.2milliohms, input capacitance (Ciss) from 990 to 2200 pF (typ.), and reverse transfer capacitance (Crss) from 54 to 140pF (typ.).

"With TSON Advance packaging, our latest MOSFETs offer designers new options to increase board density and save space, with a selection of high efficiency solutions for DC-DC conversion," said Jeff Lo, business development manager, Discrete Power Devices, for TAEC.

Package: 3.3mm x 3.3mm x 0.9mm TSON package
Price: Starts at $0.35 in sample quantities
Availability: Now in samples

For more details visit www.toshiba.com

Editorial Product Rating: Average