Date: 13/10/2009

New Magnetoresistive RAM devices from e2v for defense, avionic apps

e2v has made available of the EV2A16A, a small form-factor parallel Magnetoresistive Random Access Memory (MRAM) with 16-bit that features a density of 4 Mb, configuration of 256Kx16 and is SRAM compatible using existing SRAM controllers without the need for redesign. The EV2A16A an extended-reliability version of the MR2A16A from Everspin Technologies, which offers fast read and write cycle times (35 ns), with non-volatility and unlimited read & write endurance (>20 years data retention), for demanding applications in defence, avionics and industrial markets.

"Aerospace and defence system designers are demanding product solutions that combine the latest memory storage technology with an extended-reliability IC product", said Eric Marcelot, e2v's Hi-Rel Microprocessors Marketing Manager. Adding: "e2v is uniquely able to deliver against this need. The EV2A16A leverages over 20 years of e2v's expertise in high reliability product development, including packaging and test IC program development, and is backed by e2v's reliability and long-term availability obsolescence programs for our full line of Hi-Rel. products."

Operating temperature range: -55°C to 125°C

Package: TSOP, 11 44-pin package
Availability: Now

For more details visit www.e2v.com

Editorial Product Rating: Significant