Date: 10/09/2009

Vishay's p-channel TrenchFET Gen III power MOSFET for Electronic/Portable apps

Vishay has introduced the SiB457EDK, a new 20-V p-channel power MOSFET is built on TrenchFET Gen III p-channel technology that uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. The suggested applications of this technology are adaptor and load switches in notebook computers and industrial/general systems, Load switches in charging circuits and portable devices such as cell phones, smart phones, PDAs, and MP3 players.

Key features are.

Halogen-free according to IEC 61249-2-21 definition
New Thermally Enhanced PowerPAK
SC-75 Package
Small 1.6-mm by 1.6-mm footprint area
Low on-resistance
100 % Rg tested
Typical ESD performance: 2500 V
Built in ESD protection with zener diode
Compliant to RoHS directive 2002/95/EC

And the key specifications are, Device Package VDS (V) VGS (V) RDS(on) (mO) at VGS =
10 V 4.5 V 2.5 V 1.8 V 1.5 V
SiB457EDK PowerPAK SC-75 - 20 8 35 49 72 130
SiA921EDJ PowerPAK SC-70 - 20 12 59 98
Si7615DN PowerPAK 1212-8 - 20 12 3.9 5.5 9.8
Si7137DP PowerPAK SO-8 - 20 12 1.9 2.5 3.9
Si7145DP PowerPAK SO-8 - 30 20 2.6 3.75


Package: compact PowerPAK SC-75 package
Availability: Now
For more details visit www.vishay.com