Date: 04/09/2009

Eight-layer through Silicon Via based multi-layer 8-gigabit DRAM from Elpida

Elpida Memory has introduced a Cu-TSV (Through Silicon Via) multi-layer 8-Gigabit DRAM where the TSV is a three-dimensional packaging technology that involves stacking multi chips vertically through electrical connections with metal-filled via holes and reduces the wire distances.

The TSV DRAM consists of eight 1-Gigabit DDR3 SDRAM chips and an interface chip and uses only one-fourth the standby power compared with MCP (Multi- Chip Package), PoP (Package on Package).

Key features of 8-Gigabit TSV DRAM are,

JEDEC-compliant 8-Gigabit DDR3 SDRAM (operating at 1,600Mbps)
Number of connections between core layers: 1,030 connections
(8,357 bump connections for a single package, including the interface layer)
Package height: 1.3mm (maximum), including eight core layers and one interface layer.

The suggested applications are,

Ultra high-density DRAM modules (for use in supercomputers and servers)
DRAM/logic combined chip to enable high-performance mobile devices
High-end graphics chips for use in high-performance digital consumer electronics and game consoles

"TSV is a key technology to realize Elpida's total memory solution strategy. To take advantage of TSV wide-bit interconnects, not only ultra-high-density DRAM, we will also develop logic/DRAM combined chips to enable high-performance, low-power system chips." said Takao Adachi, Chief Technology Officer of Elpida Memory, Inc.

Availability: In samples by the end of 2009
For more details visit www.elpida.com