Date: 03/09/2009

150V high-side driver IC for automotive applications from IR

IR has introduced the AUIRS2016S, a high-voltage power MOSFET high-side driver with internal Vs-to-GND recharge NMOS. The device's output driver features a 250mA high pulse current buffer stage and the channel can be used to drive an n-channel power MOSFET in the high-side configuration, operating up to 150V above ground. The AUIRS2016S also provides negative voltage spike immunity (-Vs) to protect against catastrophic events during high-current switching and short circuit conditions. The suitable applications are automotive gate drive applications including common injection rails, diesel and gasoline direct injection applications and solenoid drivers.

"The AUIRS2016S is a robust, highly reliable IC designed to meet the rugged performance needs of automotive under-the-hood motor control units, targeting energy-efficient applications such as diesel and gasoline direct fuel injection systems," said Henning Hauenstein, vice president and general manager of IR's Automotive Products Business Unit.

Other key features and specifications are,

Lead-free, RoHS compliant
Automotive qualified
One high side output and internal low side Vs recharge.
CMOS Schmitt trigger inverted input with pull up resistor
CMOS Schmitt trigger inverted reset with pull down resistor
5V compatible logic level inputs
Immune to -Vs spike and tolerant to dVs/dt
VOUT: 4.4V - 20V
IO+ & IO-: 0.25A
Ton/off: 150ns
DTON/DTOFF: 70ns/6µs

Package: SOIC8 package
Price: Each $0.98 for 100k pieces
Availability: Now
For more details visit www.irf.com