Date: 15/08/2009

N-channel TrenchFET power MOSFETs of 30-V, 20-V from Vishay

Vishay has released a 30-V MOSFET in the 1.6-mm by 1.6-mm footprint area, and a 20-V MOSFET with low on-resistance by expanding its family of n-channel TrenchFET power MOSFETs that offers a VDS range from 8 V to 30 V.

The new 30-V SiB408DK and 20-V SiB412DK join the previously released siliconix SiB414DK. On-resistance for the SiB408DK has low 40 milli ohms at 10 V, while the SiB412DK offers an on-resistance down to 34 milli ohms at 4.5 V, which is 21 % lower than the closest competing device.

Some of the applications for n-channel power MOSFETs are, load switching, PA, and battery switches in portable electronics which includes notebook and netbook computers.

These devices are halogen-free in accordance with IEC 61249-2-21 and are compliant with RoHS Directive. 2002/95/EC. The MOSFETS are 100 % Rg- and UIS-tested.

Device Specification Table Part number SiB414DK SiB412DK SiB408DK
VDS 8 V 20 V 30 V
VGS ± 5 V ± 8 V ± 20 V
RDS(ON) @ 10 V 40 m ohms
RDS(ON) @ 4.5 V 26 m ohms 34 m ohms 50 m ohms
RDS(ON) @ 2.5 V 30 m ohms 40 m ohms
RDS(ON) @ 1.8 V 37 m ohms 54 m ohms
RDS(ON) @ 1.5 V 52 m ohms
RDS(ON) @ 1.2 V 89 m ohms



Package: PowerPAK SC-75 package
Availability: Now