Date: 14/08/2009

3 bit-per-cell 34nm NAND flash technology jointly by Intel and Micron

Intel and Micron have released a new 3-bit-per-cell (3bpc) multi-level cell (MLC) NAND technology. The 32Gb 3bpc NAND chip measuring 126mm² provide density and cost advantage for portable media gadgets.

"We see 3bpc NAND technology as an important piece of our roadmap," said Brian Shirley, vice president of Micron's memory group. "We also continue to move forward on further shrinks in NAND that will provide our customers with a world-leading portfolio of products for many years to come. Today's announcement further highlights that Micron and Intel have made great strides in 34-nanometer NAND, and we look forward to introducing our 2xnm technology later this year."

"The move to 3bpc is yet another proof point to the remarkable progress Intel and Micron have made in 34-nm NAND development," said Randy Wilhelm, Intel vice president and general manager, Intel NAND Solutions Group. "This milestone sets the stage for continued silicon leadership on 2xnm process that will help decrease costs and increase the capabilities of our NAND solutions for our customers."

For more details visit www.intel.com/pressroom