Date: 06/08/2009

IR’s 25V IRF6718 in new large can DirectFET MOSFET targeting DC switch applications

International Rectifier has introduced the 25V IRF6718 DirectFET MOSFET device offers low on-state resistance (RDS (on)) and is optimized for DC switch applications such as active O-Ring, hot swap, and electronic fuse (E-fuse).

The IRF6718 is an expansion of IR’s 25V DirectFET family featuring a new large can DirectFET package to deliver an low RDS (on) of 0.5mOhm (typical) at 10V Vgs in a 60 percent of footprint and 85 percent low profile than a D2PAK. This device reduces conduction losses associated with the pass element and improves the efficiency of the system.

“The IRF6718 is IR’s first device hosted in a large can DirectFET package. Its significantly lower RDS (on) compared to competing devices achieves superior efficiency and thermal performance for high-density DC-DC applications such as servers in a smaller footprint than a D2PAK. Moreover, board space and overall system cost can be reduced when compared to existing solutions as fewer parts are required for a given power loss,” said George Schuellein, marketing director, IR’s Multiphase Products, Enterprise Power Business Unit.

IRF6718 provides a safe operating area (SOA) capability for E-fuse and hot swap circuits, and is RoHS compliant.

The IRF6717 medium can and IRF6713 small can DirectFETs also target DC switch applications and provide low RDS (on) within their respective PCB footprints.

Key spec’s arePart Number RDS(on)
typ @10V
(mOhms) RDS(on)
typ @4.5V
(mOhms) VGS
(V) ID @ TA=25ºC
(A) Package Size
(mm x mm) RDS(on) typ @10V x Size
(mOhm x mm2)
IRF6718 0.5 1.0 +/-20 61 7 x 9.1 31.9
IRF6717 0.95 1.6 +/-20 38 4.9 x 6.3 29.3
IRF6713 2.2 3.5 +/-20 22 3.8 x 4.8 40.1


Price:
IRF6718L2TR1PbF: Starts at $1.50 for 10k pieces
Availability: Now