Date: 01/06/2010
NXP's discrete semiconductors in leadless packages
NXP Semiconductor has introduced two new small-signal discrete leadless packages measuring 2 mm by 2 mm with a low height of 0.65 mm. It is available in a 3-lead (SOT1061) and a 6-lead (SOT1118) version. The plastic SMD (Surface Mount Device) packages dissipate heat using an exposed heat sink that offers excellent thermal and electrical conductivity. It has 26 types of FET-KYs, dual P-channel MOSFET, low VCEsat transistors and Schottky rectifiers. It can achieve power dissipation Ptot up to 2.1 Watt. NXP says this performance is comparable to products in industry standard package SOT89 (SC-62) while only taking less than half it's space on a PCB. Both the versions are free of halogens and antimony oxides and thus comply with non-flammability classification UL 94V-0 and RoHS standards.
"As board space and power consumption are critical factors in the design of today's thin, compact and battery-driven devices, NXP provides a broad portfolio of small packages supporting the industry drive towards smaller form-factor end-user devices," says Ralf Euler, product marketing manager for small-signal discretes, NXP Semiconductors. "The new portfolio is ideal for applications such as high performance charging circuits, load switches and Switch Mode Power Supply (SMPS) in mobile equipment, smart phones and laptops."
Details of products available leadless package:
1. FET-KYs / Dual P-Channel MOSFET in SOT1118 (PMFPB6532UP, PMFPB6545UP, PMDPB65UP)
--It consists of two 20 V / 3 A FET-KYs with low VF Schottky diode and a 20V dual P-channel MOSFET will be released in new SOT1118 End of June.
--These products come with extra ESD protection of 1 kV (HBM) to increase ESD robustness.
--It offers a rating of 70 mOhm at 4.5VGS.These FET-KYs (PMFPB6532UP and PMFPB6545UP) offer low on-resistance in the ESD protected 20V category.
--They also offer low VF of 365 mV and 520 mV at 1A respectively for increased energy efficiency.
--The dual P-channel MOSFET PMDPB65UP features RDSon down to 70 mOhm at VGS = 4.5V. It is suggested for high-efficiency power management applications.
2. Low VCEsat (BISS) transistors in SOT1061 (PBSSPA series)
The 14 new efficient low VCEsat transistors in SOT1061 live up to their name as Breakthrough In Small Signal (BISS) transistors:
--They enable ultra-low saturation voltage down to 200mV at 6A, equivalent to an RCEsat of only 33mOhm.
--It covers a voltage range from 12V to 100V, the new PBSSPA series achieves a peak collector current ICM of up 7A.
3. Low VF Schottky rectifiers in SOT1061 (PMEGEPA series)
--It offers high forward-current capability with low forward-voltage drop.
--NXP says that the PMEGEPA Schottky rectifiers are the first such devices housed in the leadless medium-power SOT1061.
--Five AEC-Q101 qualified single types are available with an average forward current up to 2A, and a reverse voltage range between 20V and 60V.
--The product range is said to be extended by 4 dual rectifiers WITH 1 TO 2A.
--It provides stress protection using an integrated guard ring.
For more information visit: http://www.nxp.com/acrobat/literature/9397/75016946.pdf