Date: 26/05/2010

4W C-Band GaAs MMIC from Toshiba for satellite application

Toshiba has added a 4-watt (W) C-Band gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) for satellite applications to its RF product portfolio. The 4W MMIC, TMD0608-4, operates in the 5.65 to 8.50 GHz range with a high gain of 27dB throughout the operating range and 50 ohm internal matching. The device targets applications in a pre-amplifier in C-Band satellite and terrestrial communication.

The TMD0608-4 has output power at 1dB gain compression point (P1dB) of 35.5 dBm (typ.), power gain at 1dB gain compression point (G1dB) of 27dB (typ.), and is housed in a hermetically sealed package.

"Use of a broad band, internally matched amplifier can reduce the varieties of board design for different C-band requirements, save board space by minimizing the number of discrete amplification stages, and increase design reliability due to a reduced part count," said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, in TAEC's Discrete Business Unit.

Technical Specifications:

Product Characteristics TMD0608-4
Frequency 65 to 8.50 GHz
Band C-Band
Output Power, P1dB (typ.) 35.5dBm
Power Gain, G1dB (typ.) 27.0dB
Drain Current, IDD (typ.) 2.6 Amps


Availability: Samples of the Toshiba TMD0608-4 MMIC will be available 3Q 2010.

For more information visit: www.chips.toshiba.com