Date: 26/05/2010

18W and 30W GaAs FETs from Toshiba operate in the 12.7 to 13.2 GHz range

Toshiba has announced the expansion of their Ku-Band gallium arsenide field effect transistor (GaAs FETs) lineup with two higher output power devices rated for 18 and 30 watts (W).

The new GaAs FETs, TIM1213-18L and TIM1213-30L, operate in the 12.7 to 13.2 GHz range, and are targeted for use in microwave radios for microwave links and satellite communications. Other current Toshiba GaAs FETs in this frequency range feature 2W, 4W, 8W, 10W and 15W power output ratings.

The TIM 1213-18L has output power at 1dB gain compression point (P1dB) of 42.5 dBm (typ.), power gain at 1dB gain compression point (G1dB) of 6.0dB (typ.) and power efficiency of 28 percent. The TIM 1213 - 30 L features P1dB of 45.0 dBm (typ.), G1dB of 5.5dB (typ.) and power added efficiency of 23 percent.

"Continuing our long tradition of developing higher power amplifiers as technology advances, Toshiba is expanding our Ku-Band product family with these new devices to enable our customers to design more powerful and linear microwave radios with fewer components," said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, in TAEC's Discrete Business Unit.


Technical Specifications:
Product Characteristics TIM1213-18L TIM1213-30L
Frequency 12.7-13.2GHz 12.7-13.2GHz
Band Ku-Band Ku-Band
Output Power, P1dB (typ.) 42.5dBm 45.0dBm
Power Gain, G1dB (typ.) 6.0dB 5.5dB
Power Added Efficiency 28% 23%




Availability: Now

For more information visit: www.chips.toshiba.com