Date: 25/05/2010

50W GaN HEMT power amplifier from Toshiba for C-BAND SATCOM applications

Toshiba has announced the addition of 50W TGI7785-50L, a 50W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product family.

It is another C-band GaN HEMT for satellite communication applications joining the 120W C- band amplifier and other GaN Toshiba Ku-Band devices. This device operates in the 7.7 GHz to 8.5 GHz range. Its RF performance specifications include output power of 47.0dBm (typ.) with 40dBm input power, linear gain of 11.0dB2 (typ.) and drain current of 5.0 Amps2 (typ.). This device produces high output power and helps reduce size and weight in solid state power amplifiers (SSPA) for SATCOM applications.

"Our initial entry into C-Band GaN HEMTs was at the high end of the output power range, because microwave system designers have initially used GaAs devices for intermediate stage amplification to drive higher output GaN devices," said Homayoun Ghani, business development manager, Microwave, RF and Small Signal Devices, in TAEC's Discrete Business Unit. "This 50W GaN HEMT provides additional design flexibility by enabling use of higher performance GaN at a mid-amplification stage. It provides higher linear gain of 11dB compared to our conventional GaAs FETs with similar output power (45W and 60W), which have the gain of 6dB ( t yp.)3".

Availability: Now

For more information visit: www.chips.toshiba.com