Date: 18/05/2010

High power IGBT optimized for lower frequency operation

Microsemi has announced a new IGBT (Insulated Gate Bipolar Transistor) based on its latest MOS 8 technology platform. The new IGBT, APT44GA60BD30C is designed to perform well in lower frequency range of 10KHz -- 30KHz where conduction loss is the only notable system loss. It targets application such as solar inverters, high performance SMPS, and industrial equipment including welders, battery chargers, and induction heating equipment. This IGBT incorporates Microsemi's DQ diode as an anti-parallel free wheeling diode. APT44GA60BD30C reduces conduction loss options at 1.5volts, thus enabling increase in overall system efficiency for 600V designs. Input is rated at 44amps, with 38A maximums recommended at 10KHz and 27A at 30KHz.

Some of its key features are:

-- Punch Through Technology
-- Fast switching
-- High efficiency -- low saturation voltage for low conduction losses
-- Short tail -- minimizing switching losses
-- Low 1.5V saturation voltage

"Optimization of individual device parameters -- such as the lower saturation voltage of our new IGBT -- can be leveraged by designers to make dramatic improvements to overall system performance and efficiency," said Philip Zuk, Product Marketing Manager for Microsemi's Power Products Group. "In this way, power semiconductors play a key, and often under-rated, role in perfecting electrical system designs."

Package: TO-247 and TO-268.

Price: priced at US$4.53 in 1,000-piece quantities.

Availability: Now

To know more visit: www.microsemi.com