Date: 14/05/2010
NXP Semiconductor prepares SiGe devices for RF apps as alternative to GaAs
NXP Semiconductors announced the launch of a series of new products developed in the SiGe (silicon-germanium) process technology. NXP says it will offer a total of more than 50 products based on SiGe:C by end of 2010. NXP's QUBiC4 SiGe:C process is designed to meet the needs of applications in the wireless, broadband communications, networking, and multimedia markets. NXP will demonstrate its RF solutions at the 2010 IEEE MTT-S International Microwave Symposium (IMS) from May 25-27 in Anaheim, California.
"As a global leader in RF technology and component design, NXP is committed to the development of products produced with SiGe:C technology to address the fast-moving dynamics of the RF/microwave markets. We endeavor to provide cost-effective, integrated, high frequency solutions with the performance of gallium-arsenide (GaAs) technologies using a silicon-based process," said Ronald van Cleef, general manager, RF small signal business, NXP Semiconductors.
The SiGe:C QUBiC4 process aids in adding more functionality onto devices with less space, competitive cost, reliability and manufacturing advantage. This technology speeds the migration from GaAs technology to silicon by enabling cutting-edge, low-noise performance and IP availability.
Three variants of the QUBiC4 technology are available they are
QUBiC4+ is a silicon-based process for applications up to 5GHz such as medium power amplifiers.
QUBiC4X is a 0.25µm SiGe:C process introduced about 6 years ago, typically used for applications up to 30GHz and very low noise applications such as GPS.
0.25µm QUBiC4Xi SiGe:C process, offering on Ft in excess of 200GHz, which is particularly suited for applications above 30GHz and those requiring minimum noise figure, such as VSAT and radar.
Applications for QUBiC4-based products ranges from mobile platforms, personal navigation devices, AESA radars, satellite DBS/-VSAT, e-metering, software-defined radios (SDR), base stations, point-to-point radio links, and WLAN, where high frequency and high integration levels are essential. End users can benefit from increased functionality on smaller and lighter weight mobile phones.
Availability:
A total of more than 50 NXP products based on the SiGe:C process will be available by the end of 2010. A dozen products are already available, including GPS Low Noise Amplifiers such as the BGU7005, Medium Power Amplifiers such as the BGA7124 and LO Generators such as the TFF1003HN. Another 40 new products will be released in May and throughout the year, including new 6th and 7th generation wideband transistors, Low Noise Amplifiers, Medium Power Amplifiers, Variable Gain Amplifiers and LO Generators.