Date: 04/05/2010

New MOSFET package from ST Micro and Infineon to enhance power density

ST Microelectronics and Infineon have introduced new package to increase the power density of MOSFETs. To remove the internally generated heat, the 1mm-high surface-mount package houses the industry-standard TO-220 die size within a leadless outline measuring 8x8mm and an exposed metal drain pad.

ST Microelectronics' package is named as PowerFLAT 8x8 HV. ST has announced the first of PowerFLAT 8x8 HV MOSFET, the 650V STL21N65M5. Infineon has named this package as ThinPAK 8x8.

"This type of package sets a new market standard for leadless SMD packages for HV MOSFETs, and is being introduced today in co-operation with STMicroelectronics," said Jan-Willem Reynaerts, Product Line Manager HVMOS Power Discretes at Infineon Technologies. "Silicon technologies like CoolMOS have reached such an advanced stage of fast and efficient switching, that the standard traditional through-hole packages more and more have become the limiting factor in getting to the next level of energy efficiency and power density."

"Our fruitful co-operation with Infineon has produced a high-performance package allowing customers to benefit from cutting-edge design in a footprint supported by two major global power-semiconductor suppliers," said Maurizio Giudice, Marketing Director, Power Transistor Division, STMicroelectronics. "Our new MOSFETs combining this package breakthrough with our unique MDmesh V process technology, which is the most advanced in the industry, will deliver the highest power density and efficiency among devices of comparable voltage rating."

For further information visit: www.st.com and www.infineon.com