Date: 20/04/2010

NXP's power MOSFETs in LFPAK for automotive applications

NXP Semiconductors has made available automotive grade power MOSFETs in less heat generating Loss Free PAcKage (LFPAK) technology. The new range of automotive AEC-Q101 qualified SO-8 MOSFETs are thinner and takes 46% less footprint space compared to DPAK packaging technology.

The NXP LFPAK package uses no wire bonds between the silicon and the connecting lead/pin, instead LFPAK uses copper clip design with far less resistance and inductance compared to wire-bond resulting in reduction of power loss. LFPAK can be suggested for designs requiring higher power densities in smaller space. NXP's LFPAK product range covers different application requirements.

"We believe that NXP's LFPAK will set a new industry benchmark as the most reliable power MOSFET package in the automotive market. It will allow the development of more compact modules for the automotive OEMs," said Norman Stapelberg, Senior Product Marketing Manager, NXP Semiconductors. "Customer feedback consistently shows that LFPAK is more reliable than competitor QFN & micro-lead devices. The launch of LFPAK displays NXPs continued commitment to the development and manufacture of low voltage MOSFETs for the automotive industry," he added.

NXP claims its LFPAK range offer best-in-class performance and reliability across the 5 voltage grades compared to all fully automotive qualified Power SO-8 MOSFETs available in the market.

The suggested applications of these MOSFETs include engine and transmission controllers, advanced braking systems, coolant pumps, DC/DC converters, and electric power steering (EPS) and electric hydraulic power steering (EHPS) systems for cars.

Availability: Now in samples