Date: 05/03/2010

Clare's new gate driver IC for driving high voltage MOSFETs and IGBTs

Discrete Semiconductor specialist IXYS subsidiary Clare has made available the IX2127, a high-voltage gate driver IC. The IX2127 can drive high-voltage, high-speed power MOSFETs and IGBTs. IX2127 integrates high voltage level shift circuitry and a floating channel to drive N-channel power MOSFETs and IGBTs in the high-side configuration operating up to voltage of 600V.

This IC is made using high-voltage BCDMOS on Silicon-on-Insulator (SOI) process. IX2127 withstands negative transient voltages and provides better noise immunity. This device is protected for supply under-voltage lockout, over-current detection and shutdown, and fault reporting. IX2127 also houses a comparator to detect high-current condition in the MOSFET or IGBT device, and then shut down drive to that device. An open-drain output, FAULT, indicates that an over-current shutdown has occurred. IX2127 is well suited for motor driver, switch-mode power supply, lighting and industrial applications.

Package: 8-pin DIP or an 8-lead SOIC package
To learn more visit www.clare.com