Date: 25/10/2011

22 A to 47 A rated N-channel MOSFETs with on-res of 64 m ohm to 190 m ohm at 10 V

Vishay Intertechnology, Inc. has released a new series of 600 V and 650 V n-channel power MOSFETs with ultra-low maximum on resistance from 64 m ohms to 190 m ohms at 10 V, and current ratings from 22 A to 47 A. Based on Vishay's next generation of Super Junction Technology, the E Series MOSFETs offer ultra-low gate charge and low gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications.

According to Vishay, with the new E Series technology, on-resistance is reduced by 30 % compared to previous-generation S Series devices. Gate drive losses are also reduced due to the lower input capacitance of this new platform.

The 12 E Series devices released include four 22 A MOSFETs and four 30 A MOSFETs with on-resistance of 190 m ohms and 125 m ohms, respectively, at 10 V. The 22 A and 30 A MOSFETs are available in the TO-220, TO-220 FullPAK, TO-247, and TO-263 (D2PAK) packages. In addition, one 47 A device with on-resistance of 64 m ohms at 10 V is offered in the TO-247 and a 24 A 650 V MOSFET with an on-resistance of 150 m ohms is offered in the TO-220, TO-263 (D2PAK), and TO-247 packages.

As per Vishay, the ultra-low on-resistance of the E Series translates into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including power factor correction, server and telecom power systems, welding, plasma cutting, battery chargers, high-intensity discharge (HID) lighting, fluorescent ballast lighting, semiconductor capital equipment, solar inverters, and induction heating.

The devices are designed to withstand high-energy pulses in the avalanche and commutation mode with guaranteed limits through 100 % UIS testing. The MOSFETs are compliant to RoHS Directive 2002/95/EC.
Samples of these new power MOSFETs are available today, with lead times of 16 to 17 weeks for production orders.